Abstract
This study focuses on the cyclic voltammetry behavior at shallow recessed microdisc electrode, particularly on the transition from cottrellian behavior to steady state behavior. Diffusion to the inlaid and recessed microdisc electrode is simulated. From the shape of the CVs, for a given radius and potential scan rate, the transition time from planar diffusion to hemispherical diffusion presents a minimum as the recess increases. Theoretical prediction was confirmed by fitting the simulated CVs with experimental results. Dimensionless transition scan rate has been defined and determined by simulation for inlaid and recessed microdisc electrodes.