Abstract
High-quality two-dimensional transition metal dichalcogenides (2D TMDs), such as molybdenum disulfide (MoS(2)), have significant potential for advanced electrical and optoelectronic applications. This study introduces a novel approach to control the localized growth of MoS(2) through the selective oxidation of bulk molybdenum patterns using Joule heating, followed by sulfurization. By passing an electric current through molybdenum patterns under ambient conditions, localized heating induced the formation of a molybdenum oxide layer, primarily MoO(2) and MoO(3), depending on the applied power and heating duration. These oxides act as nucleation sites for the subsequent growth of MoS(2). The properties of the grown MoS(2) films were investigated using Raman spectroscopy and photoluminescence measurements, showing promising film quality. This study demonstrates that Joule heating can be an effective method for precise control over TMD growth, offering a scalable approach for producing high-quality 2D materials that have the potential to be integrated into next-generation electrical and optoelectronic technologies.