Abstract
Semiconductor-in-glass composites are an exciting class of photonic materials for various fundamental applications. The significant challenge is the scalable elaboration of composite with the desirable combination of tunable structure, high semiconductor loading ratio, and excellent transparency. Here we report that the topological engineering strategy via hybridization of the glass network former enables to surmount the aforementioned challenge. It not only facilitates the in situ precipitation of (Ga(2-x)Al(x))O(3) domains with continuously tunable composition but also allows to simultaneously refine the grain size and enhance the crystallinity. In addition, the composites exhibit excellent transparency and can host various active dopants. We demonstrate the attractive broadband optical response of the composite and achieve the pulse laser operation in mid-infrared waveband. The findings are expected to provide a fundamental principle of in situ modification in hybrid system for generation of high-performance semiconductor-in-glass composites.