Abstract
Our study aims to fabricate a hydrogen sensor based on thermal stability analysis of Ta(2)O(5) film, and to determine the effect of Pd electrodes on the hydrogen sensor at high temperatures. First, in order to ensure high-temperature stability of silicon carbide (SiC)-based hydrogen sensors, the thermal stability of Ta(2)O(5) dielectric thin film at temperatures above 900 °C was studied. The sensor structure consisted of a metal-insulator-semiconductor (MIS) and a tantalum oxide (Ta(2)O(5)) dielectric film was formed by rapid thermal oxidation (RTO). The Ta(2)O(5) film was assessed through SEM, TEM, SIMS, and dielectric breakdown strength to observe thermal stability. Secondly, hydrogen sensors using a SiC substrate were fabricated, with the process considering thermal stability. The response characteristics for hydrogen were evaluated using three types of sensors with different Pd electrode patterns. The patterns of the Pd electrode were designed as squares or grid shapes, and were characterized by 100%, 75%, and 50% area ratios of Pd electrodes covering the Ta(2)O(5) layer. The results showed that the sensor with a 100% area ratio of the Pd electrode had better sensitivity and linear response characteristics compared to sensors with a 50% area ratio of the Pd electrode.