Charge-trap synaptic device with polycrystalline silicon channel for low power in-memory computing

用于低功耗内存计算的多晶硅沟道电荷陷阱突触器件

阅读:1

Abstract

Processing-in-memory (PIM) is gaining tremendous research and commercial interest because of its potential to replace the von Neumann bottleneck in current computing architectures. In this study, we implemented a PIM hardware architecture (circuit) based on the charge-trap flash (CTF) as a synaptic device. The PIM circuit with a CT memory performed exceedingly well by reducing the inference energy in the synapse array. To evaluate the image recognition accuracy, a Visual Geometry Group (VGG)-8 neural network was used for training, using the Canadian Institute for Advanced Research (CIFAR)-10 dataset for off-chip learning applications. In addition to the system accuracy for neuromorphic applications, the energy efficiency, computing efficiency, and latency were closely investigated in the presumably integrated PIM architecture. Simulations that were performed incorporated cycle-to-cycle device variations, synaptic array size, and technology node scaling, along with other hardware-sense considerations.

特别声明

1、本页面内容包含部分的内容是基于公开信息的合理引用;引用内容仅为补充信息,不代表本站立场。

2、若认为本页面引用内容涉及侵权,请及时与本站联系,我们将第一时间处理。

3、其他媒体/个人如需使用本页面原创内容,需注明“来源:[生知库]”并获得授权;使用引用内容的,需自行联系原作者获得许可。

4、投稿及合作请联系:info@biocloudy.com。