Abstract
Photoexcited lead-free perovskite CH(3)NH(3)SnI(3) based solar cell device was simulated using a solar cell capacitance simulator. It was modeled to investigate its output characteristics under AM 1.5G illumination. Simulation efforts are focused on the thickness, acceptor concentration and defect density of absorber layer on photovoltaic properties of solar cell device. In addition, the impact of various metal contact work function was also investigated. The simulation results indicate that an absorber thickness of 500 nm is appropriate for a good photovoltaic cell. Oxidation of Sn(2+) into Sn(4+) was considered and it is found that the reduction of acceptor concentration of absorber layer significantly improves the device performance. Further, optimizing the defect density (10(14) cm(-3)) of the perovskite absorber layer, encouraging results of the J(sc) of 40.14 mA/cm(2), V(oc) of 0.93 V, FF of 75.78% and PCE of 28.39% were achieved. Finally, an anode material with a high work function is necessary to get the device's better performance. The high-power conversion efficiency opens a new avenue for attaining clean energy.