Abstract
Stabilized FeSe thin films in ambient pressure with tunable superconducting critical temperature would be a promising candidate for superconducting electronic devices. By carefully controlling the depositions on twelve kinds of substrates using a pulsed laser deposition technique single crystalline FeSe thin films were fabricated. The high quality of the thin films was confirmed by X-ray diffraction with a full width at half maximum of 0.515° in the rocking curve and clear four-fold symmetry in φ-scan. The films have a maximum T (c) ~ 15 K on the CaF(2) substrate and were stable in ambient conditions air for more than half a year. Slightly tuning the stoichiometry of the FeSe targets, the superconducting critical temperature becomes adjustable below 15 K with quite narrow transition width less than 2 K. These FeSe thin films deposited on different substrates are optimized respectively. The T(c) of these optimized films show a relation with the out-of-plane (c-axis) lattice parameter of the FeSe films.