The Influence of Preparation Temperature on the Different Facets of Bulk MgB(2) Superconductors

制备温度对块状MgB(2)超导体不同方面的影响

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Abstract

Two MgB(2) samples were prepared using the spark plasma sintering (SPS) technique at different temperatures-950 °C (S1) and 975 °C (S2)-for 2 h under 50 MPa pressure to study the influence of preparation temperature on different facets, namely those perpendicular (PeF) and parallel (PaF) to the compression direction of uniaxial pressure during the SPS of MgB(2) samples. We analyzed the superconducting properties of the PeF and PaF of two MgB(2) samples prepared at different temperatures from the curves of the critical temperature (T(C)), the curves of critical current density (J(C)), the microstructures of MgB(2) samples, and the crystal size from SEM. The values of the onset of the critical transition temperature, T(c,onset), were around 37.5 K and the transition widths were about 1 K, which indicates that the two samples exhibit good crystallinity and homogeneity. The PeF of the SPSed samples exhibited slightly higher J(C) compared with that of the PaF of the SPSed samples over the whole magnetic field. The values of the pinning force related to parameters h(0) and K(n) of the PeF were lower than those of the PaF, except for K(n) of the PeF of S1, which means that the PeF has a stronger GBP than the PaF. In low field, the most outstanding performance was S1-PeF, whose critical current density (J(C)) was 503 kA/cm(2) self-field at 10 K, and its crystal size was the smallest (0.24 µm) among all the tested samples, which is consistent with the theory that a smaller crystal size can improve the J(C) of MgB(2). However, in high field, S2-PeF had the highest J(C) value, which is related to the pinning mechanism and can be explained by grain boundary pinning (GBP). With an increase in preparation temperature, S2 showed a slightly stronger anisotropy of properties. In addition, with an increase in temperature, point pinning becomes stronger to form effective pinning centers, leading to a higher J(C).

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