Abstract
Gallium oxynitride (GaON) nanosheets for photoelectrochemical (PEC) analysis are synthesized via direct solvothermal approach. Their FE-SEM revealed nanosheets morphology of GaON prepared at a reaction time of 24 hours at 180 °C. The elemental composition and mapping of Ga, O and N are carried out through electron dispersive X-ray spectroscopy (EDX). The cubic structure of GaON nanosheets is elucidated by X-ray diffraction (XRD)analysis. The X-ray Photoelectron Spectroscopy (XPS) further confirms Ga, O and N in their respective ratios and states. The optical properties of GaON nanosheets are evaluated via UV-Visible, Photoluminescence (PL) and Raman spectroscopy's. The band gap energy of ~1.9 eV is calculated from both absorption and diffused reflectance spectroscopy's which showed stronger p-d repulsions in the Ga (3d) and N (2p) orbitals. This effect and chemical nitridation caused upward shift of valence band and band gap reduction. The GaON nanosheets are investigated for PEC studies in a standard three electrode system under 1 Sun irradiation in 0.5 M Na2SO4. The photocurrent generation, oxidation and reduction reactions during the measurements are observed by Chronoampereometry, linear sweep Voltametry (LSV) and Cyclic Voltametry (CV) respectively. Henceforward, these GaON nanosheets can be used as potential photocatalyts for solar water splitting.