Abstract
γ-Aminobutyric acid (GABA) is an important inhibitory neurotransmitter in the central nervous system (CNS), which acts as a major biomarker for neurological disorders such as Parkinson's disease and Meningitis. To this end, the precise measurement of GABA molecule arisen as an important subject for the effective diagnosis and treatment of neurological disorders. However, yet highly sensitive biosensor systems which can analyze a wide range of GABA molecule in a fast response manner have not been reported. In this study, for the first time, a silicon nanowire field-effect transistor (FET) device based immunosensor was developed to detect GABA molecule. Zig-zag shaped silicon nanowires has been fabricated by electron beam lithography and the electrical property p-type FET device was validated through semiconductor analyzer. The optimal immobilizing condition of antibody against GABA molecule was determined by the fluorescent signal measurement. Various concentrations of GABA ranging from 970 fM to 9.7 μM were sensitively measured by conductance change on silicon nanowire-based through the immunoreactions. Further, owing to the ease of miniaturization and label-free system, we believe that the suggested device system has a potential to be utilized for an implantable biosensor to detect neurotransmitter in the brain and can create new opportunities in the field of diagnosis and treatment of neurological disorders.