Abstract
A low power, dual-gate field-effect transistor (FET) hydrogen gas sensor with graphene decorated Pd-Ag for hydrogen sensing applications was developed. The FET hydrogen sensor was integrated with a graphene-Pd-Ag-gate FET (GPA-FET) as hydrogen sensor coupled with Pt-gate FET as a reference sensor on a single sensor platform. The sensing gate electrode was modified with graphene by an e-spray technique followed by Pd-Ag DC/MF sputtering. Morphological and structural properties were studied by FESEM and Raman spectroscopy. FEM simulations were performed to confirm the uniform temperature control at the sensing gate electrode. The GPA-FET showed a high sensing response to hydrogen gas at the temperature of 25~254.5 °C. The as-proposed FET H(2) sensor showed the fast response time and recovery time of 16 s, 14 s, respectively at the operating temperature of 245 °C. The variation in drain current was positively related with increased working temperature and hydrogen concentration. The proposed dual-gate FET gas sensor in this study has potential applications in various fields, such as electronic noses and automobiles, owing to its low-power consumption, easy integration, good thermal stability and enhanced hydrogen sensing properties.