Abstract
Modulating memristors optically paves the way for new optoelectronic devices with applications in computer vision, neuromorphic computing, and artificial intelligence. Here, we report on memristors based on a hybrid material of vertically aligned zinc oxide nanorods (ZnO NRs) and poly(methyl methacrylate) (PMMA). The memristors require no forming step and exhibit the typical electronic switching properties of a bipolar memristor. The devices can also be switched optically and demonstrate an optically tunable multilevel switching behavior upon illumination with UV light. Additionally, the devices demonstrate high-performance photonic synaptic functionalities, including excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), and enhanced potentiation/depression and learning-forgetting characteristics. Notably, after the removal of the UV light, the optoelectronic memristor exhibits a short-term memory due to a persistent photoconductance (PPC) effect. Such a behavior has application in the fabrication of cloned neural networks with pretrained information. The work provides a promising pathway for the fabrication of simple, easy-to-make, and low-cost optoelectronic devices for memory and optically tuned neuromorphic computing applications.