Ultralow trap density FAPbBr(3) perovskite films for efficient light-emitting diodes and amplified spontaneous emission.

Solution-processed metal halide perovskites are widely studied for their potential in high-efficiency light-emitting diodes, yet they are facing several challenges like insufficient brightness, short operational lifetimes, and reduced power conversion efficiency under practical operation conditions. Here, we develop an interfacial amidation reaction on sacrificial ZnO substrates to produce perovskite films with low trap density (1.2 × 10(10 )cm(-3)), and implement a device structure featuring a mono-molecular hole-injection layer and an all-inorganic bi-layered electron-injection layer. This design leads to green perovskite light-emitting diodes with a brightness of ~ 312,000 cd m(-2), a half-lifetime of 350 h at 1000 cd m(-2), and a power conversion efficiency of 15.6% at a current density of 300 mA cm(-2). Furthermore, the perovskite films show a low amplified spontaneous emission threshold of 13 μJ cm(-2). Thus, our approach significantly advances the performance of green perovskite light-emitting diodes and opens up an avenue toward perovskite-based electrically pumped lasers.