Formation Mechanism and Prevention of Cu Undercut Defects in the Photoresist Stripping Process of MoNb/Cu Stacked Electrodes.

The Cu undercut is a recently discovered new defect generated in the wet stripping process of MoNb/Cu gate stacked electrodes for thin-film transistors (TFTs). The formation mechanism and preventive strategy of this defect were identified and investigated in this paper. The impact of stripper concentration and stripping times on the morphology and the corrosion potential (E(corr)) of Cu and MoNb were studied. It is observed that the undercut is Cu tip-deficient, not the theoretical MoNb indentation, and the undercut becomes severer with the increase in stripping times. The in-depth mechanism analysis revealed that the abnormal Cu undercut was not ascribed to the galvanic corrosion between MoNb and Cu but to the local crevice corrosion caused by the corrosive medium intruding along the MoNb/Cu interface. Based on this newly found knowledge, three possible prevention schemes (MoNiTi (abbreviated as Mo technology development (MTD) layer/Cu), MoNb/Cu/MTD, and MoNb/Cu/MoNb) were proposed. The experimental validation shows that the Cu undercut can only be completely eliminated in the MoNb/Cu/MTD triple-stacked structure with the top MTD layer as a sacrificial anode. This work provides an effective and economical method to avoid the Cu undercut defect. The obtained results can help ensure TFT yield and improve the performance of TFT devices.