Abstract
In this paper, a nanoscale dopingless bidirectional RFET (BRFET) is proposed. Unlike conventional BRFETs, the proposed BRFET uses two different metal materials to form two different types of Schottky barriers on the interface between the S/D and silicon. For one of the two metal forms, the Schottky barrier height between the conduction band of the semiconductor and one of the two metal materials is lower than half of the energy band gap. The Schottky barrier height between the valence band of the semiconductor and the other kind of the two metal materials is lower than half of the energy band gap of the semiconductor. Therefore, a complementary low Schottky barrier (CLSB) is formed. Therefore, more carriers from the source electrode can easily flow into the semiconductor region through thermionic emission in both n-mode and p-mode compared to conventional BRFET operation, which generates carriers through the band-to-band tunneling effect. Therefore, a larger forward current can be achieved by the proposed CLSB-BRFET. The performance of the CLSB-BRFET is investigated by device simulation and compared with that of the BRFET. The working principle is interpreted through an analysis based on energy band theory. The output characteristics and reconfigurable function are also investigated and verified.