A Label-Free Immunosensor for IgG Based on an Extended-Gate Type Organic Field Effect Transistor

基于扩展栅极型有机场效应晶体管的 IgG 无标记免疫传感器

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作者:Tsukuru Minamiki, Tsuyoshi Minami, Ryoji Kurita, Osamu Niwa, Shin-Ichi Wakida, Kenjiro Fukuda, Daisuke Kumaki, Shizuo Tokito

Abstract

A novel biosensor for immunoglobulin G (IgG) detection based on an extended-gate type organic field effect transistor (OFET) has been developed that possesses an anti-IgG antibody on its extended-gate electrode and can be operated below 3 V. The titration results from the target IgG in the presence of a bovine serum albumin interferent, clearly exhibiting a negative shift in the OFET transfer curve with increasing IgG concentration. This is presumed to be due an interaction between target IgG and the immobilized anti-IgG antibody on the extended-gate electrode. As a result, a linear range from 0 to 10 µg/mL was achieved with a relatively low detection limit of 0.62 µg/mL (=4 nM). We believe that these results open up opportunities for applying extended-gate-type OFETs to immunosensing.

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