Abstract
This work reports the preparation of a three-dimensional Si thin film negative electrode employing a porous Cu current collector. A previously reported copper etching procedure was modified to develop the porous structures inside a 9 μm thick copper foil. Magnetron sputtering was used for the deposition of an n-type doped 400 nm thick amorphous Si thin film. Electrochemical cycling of the prepared anode confirmed the effectiveness of utilizing the approach. The designed Si thin film electrode retained a capacity of around 67 μAh cm(-2) (1675 mAh g(-1)) in 100(th) cycle. The improved electrochemical performance resulted in an enhancement of both areal capacity and capacity retention in contrast with flat and rough current collectors that were prepared for comparison.