Position-controlled III-V compound semiconductor nanowire solar cells by selective-area metal-organic vapor phase epitaxy

利用选择性区域金属有机化学气相外延法制备位置可控的III-V族化合物半导体纳米线太阳能电池

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Abstract

We demonstrate position-controlled III-V semiconductor nanowires (NWs) by using selective-area metal-organic vapor phase epitaxy and their application to solar cells. Efficiency of 4.23% is achieved for InP core-shell NW solar cells. We form a 'flexible NW array' without a substrate, which has the advantage of saving natural resources over conventional thin film photovoltaic devices. Four junction NW solar cells with over 50% efficiency are proposed and discussed.

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