Abstract
This work is dedicated to developing a method of combined surface morphology- and crystallographic analysis for crystalline silicon. To demonstrate the applicability of the method, a series of chemical operations, such as polishing and texturing, were applied to multi-crystalline silicon samples. The samples were pre- and post-analysed with WLI and Laue techniques, and the experimental data allowed construction of maps for crystal orientation to etching rate dependency. The study illustrates the strengths of the combinatory technique as an alternative to existing techniques such as atom force microscopy (AFM) and electron backscatter diffraction (EBSD).•Combination of LAUE tool and white light interferometry techniques.•Alternative time-effective method to EBSD.•Analysis of surface morphology and crystallographic properties for chemical processing.