Abstract
The surface state of a 3D topological insulator (3DTI) is a spin-momentum locked conductive state, whose large spin hall angle can be used for the energy-efficient spin-orbit torque based switching of an overlying ferromagnet (FM). Conversely, the gated switching of the magnetization of a separate FM in or out of the TI surface plane can turn on and off the TI surface current. By exploiting this reciprocal behavior, we can use two FM/3DTI heterostructures to design an integrated 1-transistor 1-magnetic tunnel junction random access memory unit (1T1MTJ RAM) for an ultra low power Processing-in-Memory (PiM) architecture. Our calculation involves combining the Fokker-Planck equation with the Nonequilibrium Green Function (NEGF) based flow of conduction electrons and Landau-Lifshitz-Gilbert (LLG) based dynamics of magnetization. Our combined approach allows us to connect device performance metrics with underlying material parameters, which can guide proposed experimental and fabrication efforts.