Single Trap States in Single CdSe Nanoplatelets

单CdSe纳米片中的单陷阱态

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Abstract

Trap states can strongly affect semiconductor nanocrystals, by quenching, delaying, and spectrally shifting the photoluminescence (PL). Trap states have proven elusive and difficult to study in detail at the ensemble level, let alone in the single-trap regime. CdSe nanoplatelets (NPLs) exhibit significant fractions of long-lived "delayed emission" and near-infrared "trap emission". We use these two spectroscopic handles to study trap states at the ensemble and the single-particle level. We find that reversible hole trapping leads to both delayed and trap PL, involving the same trap states. At the single-particle level, reversible trapping induces exponential delayed PL and trap PL, with lifetimes ranging from 40 to 1300 ns. In contrast with exciton PL, single-trap PL is broad and shows spectral diffusion and strictly single-photon emission. Our results highlight the large inhomogeneity of trap states, even at the single-particle level.

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