Abstract
Doping of graphitic carbon nitride (g-C(3)N(4)) with semiconductors prevents electron-hole recombination and enhances adsorption capacity. This work investigates the synthesis of a water remediation material using g-C(3)N(4) doped with CeO(2) using two different techniques. The chemical structures of the doped g-C(3)N(4) samples were confirmed using FTIR, XRD, XPS and their morphology was studied using SEM-EDX. Charge transport through the doped materials was illustrated by a comprehensive dielectric study using broadband spectroscopy. The ability of doped g-C(3)N(4) to adsorb heavy metals was investigated thoroughly in the light of applying different parameters such as temperature, pH, time, and concentration. The results showed that the mode of doping of g-C(3)N(4) by CeO(2) strongly affected its adsorption capacity. However, g-C(3)N(4) doped with CeO(2) using the first mode adsorbed 998.4 mg g(-1) in case of Pb(2+) and 448 for Cd(2+). Kinetic study revealed that the adsorption process obeyed PSORE as its q (exp) (e) is close to its q (cal) (e) and the rate-controlling step involved coordination among the synthetic materials and the heavy metal ions. The recovery of Pb(2+) and Cd(2+) ions from various sorbents was investigated by utilizing different molar concentrations of HNO(3) and indicated no significant change in the sorption capability after three different runs. This study has demonstrated an efficient method to obtain a highly efficient adsorbent for removing heavy metals from waste water.