Current-induced switching of a van der Waals ferromagnet at room temperature

室温下范德华铁磁体的电流诱导开关

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作者:Shivam N Kajale #, Thanh Nguyen #, Corson A Chao, David C Bono, Artittaya Boonkird, Mingda Li, Deblina Sarkar

Abstract

Recent discovery of emergent magnetism in van der Waals magnetic materials (vdWMM) has broadened the material space for developing spintronic devices for energy-efficient computation. While there has been appreciable progress in vdWMM discovery, a solution for non-volatile, deterministic switching of vdWMMs at room temperature has been missing, limiting the prospects of their adoption into commercial spintronic devices. Here, we report the first demonstration of current-controlled non-volatile, deterministic magnetization switching in a vdW magnetic material at room temperature. We have achieved spin-orbit torque (SOT) switching of the PMA vdW ferromagnet Fe3GaTe2 using a Pt spin-Hall layer up to 320 K, with a threshold switching current density as low as [Formula: see text]1.69 [Formula: see text] 106 A cm-2 at room temperature. We have also quantitatively estimated the anti-damping-like SOT efficiency of our Fe3GaTe2/Pt bilayer system to be [Formula: see text], using the second harmonic Hall voltage measurement technique. These results mark a crucial step in making vdW magnetic materials a viable choice for the development of scalable, energy-efficient spintronic devices.

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