Synthesis and Characterization of Tungsten Nitrido Amido Guanidinato Complexes as Precursors for Chemical Vapor Deposition of WNxCy Thin Films

钨氮酰胺胍基配合物的合成及作为 WNxCy 薄膜化学气相沉积前体的表征

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作者:Michelle M Nolan #, Alexander J Touchton #, Nathaniel E Richey, Ion Ghiviriga, James R Rocca, Khalil A Abboud, Lisa McElwee-White

Abstract

Tungsten nitrido amido guanidinato complexes of the type WN(NR2)[(NR')2C(NR2)]2 (R = Me, Et; R' = i Pr, Cy) were synthesized as precursors for aerosol-assisted chemical vapor deposition (AACVD) of WNxCy thin films. The reaction of tungsten nitrido amido complexes of the type WN(NR2)3 (R = Me, Et) with two equivalents of a carbodiimide R'N=C=NR' (R' = i Pr, Cy) resulted in two insertions of a carbodiimide into W-N(amido) bonds, affording bis(guanidinato) amido nitrido tungsten complexes. These compounds were characterized by 14N NMR, indicating distinctive chemical shifts for each type of N-bound ligand. Crystallographic structure determination of WN(NMe2)[(N i Pr)2C(NMe2)]2 showed the guanidinato ligands to be non-equivalent. The complex WN(NMe2)[(N i Pr)2C(NMe2)]2 was demonstrated to serve as a precursor for AACVD of WNxCy thin films, resulting in featureless, X-ray amorphous thin films for growth temperatures 200 - 400 °C.

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