Abstract
Electro-thermal annealing (ETA) in a MOSFET utilizes Joule heating. The high-temperature heat effectively cures gate dielectric damages induced by electrical stresses or ionizing radiation. However, even though ETA can be used to improve the reliability of logic and memory devices, applying ETA in state-of-the-art field-effect transistors (FETs) such as nanosheet FETs (NS FETs) has not yet been demonstrated. This paper addresses the heat distribution characteristic of an NS FET considering the application of ETA, using 3D simulations. A vacuum inner spacer is newly proposed to improve annealing effects during ETA. In addition, evaluations of the device scaling and annealing effect were performed with respect to gate length, nanosheet-to-nanosheet vertical space, and inner spacer thickness. Guidelines for ETA in NS FETs can be provided on the basis of the results.