Abstract
The manipulation and mechanism of two-dimensional (2D) transition metal dichalcogenides (TMDs) by external electric field are significant to the photoelectric properties. Herein, the 2D MoS(2) nanosheets were oxidized to form MoS(2)-MoO(3) local heterojunctions by an electric field, applied in multistable memristors for the proposal of NanoQR code. A modified thermal oxidation model was derived to reveal the mechanism of local electric oxidation on 2D MoS(2). From current-voltage curves, the barrier height of the MoS(2) device showed an increase of 0.39 eV due to local oxidation after applying voltage for 480 s. Based on density-functional theory, the increase of barrier height was calculated as 0.38 eV between MoS(2)-MoS(2) and MoS(2)-MoO(3) supercells. The 2D MoS(2)-MoO(3) local heterojunctions were further applied as multistable memory storage at the nanoscale. The findings suggest a novel strategy for controlling local electric oxidation on 2D TMDs to manipulate the properties for the application of photoelectric memory nanodevices.