Abstract
Based on the electrical conductivity model built for graphene oxide, the thermal crosstalk effects of resistive random access memory (RRAM) with graphene electrode and Pt electrode are simulated and compared. The thermal crosstalk effects of Pt-RRAM with different metal oxides of TiO(x), NiO(x), HfO(x), and ZrO(x) are further simulated and compared to guide its compatibility design. In the Pt-RRAM array, the distributions of oxygen vacancy density and temperature are obtained, and the minimum spacing between adjacent conduction filaments to avoid device operation failure is discussed. The abovementioned four metal oxides have different physical parameters such as diffusivity, electrical conductivity, and thermal conductivity, from which the characters of the RRAMs based on one of the oxides are analyzed. Numerical results reveal that thermal crosstalk effects are severe as the spacing between adjacent conduction filaments is small, even leading to the change of logic state and device failure.