Abstract
Multi-exciton generation by multi-photon absorption under low-energy photons can be thought a reasonable method to reduce the risk of optical damage, especially in photoelectric quantum dot (QD) devices. The lifetime of the multi-exciton state plays a key role in the utilization of photon-induced carriers, which depends on the dynamics of the exciton generation process in materials. In this paper, the exciton generation dynamics of the photon absorption under low-frequency light in CdSe QDs are successfully detected and studied by the temporal resolution transient absorption (TA) spectroscopy method. Since the cooling time of hot excitons extends while the rate of auger recombination is accelerated when incident energy is increased, the filling time of defect states is irregular, and exciton generation experiences a transition from single-photon absorption to multi-photon absorption. This result shows how to change the excitation. Optical parameters can prolong the lifetime of excitons, thus fully extracting excitons and improving the photoelectric conversion efficiency of QD optoelectronic devices, which provides theoretical and experimental support for the development of QD optoelectronic devices.