Abstract
Mixed micro- and nanoscale structures are gaining popularity in various fields due to their rapid advances in patterning. An investigation in stamp resist filling with multiscale cavities via ultraviolet (UV) nanoimprint lithography (UV-NIL) is necessary to improve stamp design. Here, simulations at the level of individual features were conducted to explain different filling behaviors of micro- and nanoscale line patterns. There were noticeable interactions between the micro-/nanoscale cavities. These delayed the resist filling process. Several chip-scale simulations were performed using test patterns with different micro/nano ratios of 1:1, 1:2, and 1:3. There were some minor influences that changed the micro/nano ratios on overall imprint qualities. During the imprinting process, the pressure difference at the boundary between micro- and nanoscale patterns became obvious, with a value of 0.04 MPa. There was a thicker residual layer and worse cavity filling when the proportion of nanoscale structures increased.