Abstract
Nanoscale tellurium (Te) materials are promising for advanced optoelectronics owing to their outstanding photoelectrical properties. In this work, high-performance optoelectronic nanodevice based on a single tellurium nanotube (NT) was prepared by focused ion beam (FIB)-assisted technique. The individual Te NT photodetector demonstrates a high photoresponsivity of 1.65 × 10(4) AW(-1) and a high photoconductivity gain of 5.0 × 10(6)%, which shows great promise for further optoelectronic device applications.