Abstract
On-chip optical modulators, which are capable of converting electrical signals into optical signals, constitute the foundational components of photonic devices. Photonics modulators exhibiting high modulation efficiency and low insertion loss are highly sought after in numerous critical applications, such as optical phase steering, optical coherent imaging, and optical computing. This paper introduces a novel accumulation-type vertical modulator structure based on a silicon photonics platform. By incorporating a high-K dielectric layer of ZrO(2), we have observed an increase in modulation efficiency while maintaining relatively low levels of modulation loss. Through meticulous study and optimization, the simulation results of the final device structure demonstrate a modulation efficiency of 0.16 V·cm, with a mere efficiency-loss product of 8.24 dB·V.