Abstract
Low-dimensional nano and two-dimensional materials are of great interest to many disciplines and may have a lot of applications in fields such as electronics, optoelectronics, and photonics. One can create quantum Hall phases by applying a strong magnetic field perpendicular to a two-dimensional electron system. One characterizes the nature of the system by looking at magneto-transport data. There have been a few quantum phases seen in past experiments on GaAs/AlGaAs heterostructures that manifest anisotropic magnetoresistance, typically, in high Landau levels. In this work, we model the source of anisotropy as originating from an internal anisotropic interaction between electrons. We use this framework to study the possible anisotropic behavior of finite clusters of electrons at filling factor 1/6 of the lowest Landau level.