Abstract
Graphene oxide (GO) is a monolayer of oxidized graphene which is a convenient and potential candidate in a wide range of fields of applications like electronics, photonics, optoelectronics, energy storage, catalysis, chemical sensors, and many others. GO is often composed of various oxygen-containing groups such as hydroxyl, carboxyl, and epoxy. One appealing method for achieving graphene-like behavior with sp(2) hybridized carbon is the reduction of GO i.e. formation of reduced graphene oxide (RGO). A stepwise reduction GO to form a family of RGO, containing various quantities of oxygen-related defects was carried out. Herein, the defects related chemical and physical properties of GO and the RGO family were studied and reported in an effort to understand how the properties of RGO vary with the reduction rate. Although there are several reports on various features and applications of GO and RGO but a systematic investigation of the variation of the physical and chemical properties in RGO with the varying quantities of oxygeneous defects is imperative for the engineered physical properties in achieving the desired field of applications. We have attempted to look at the role of sp(2) and sp(3) carbon fractions, which are present in RGO-based systems, and how they affect the electrical, optoelectronic, and adsorption characteristics.