Abstract
Transferable Ga(2)O(3) thin film membrane is desirable for vertical and flexible solar-blind photonics and high-power electronics applications. However, Ga(2)O(3) epitaxially grown on rigid substrates such as sapphire, Si, and SiC hinders its exfoliation due to the strong covalent bond between Ga(2)O(3) and substrates, determining its lateral device configuration and also hardly reaching the ever-increasing demand for wearable and foldable applications. Mica substrate, which has an atomic-level flat surface and high-temperature tolerance, could be a good candidate for the van der Waals (vdW) epitaxy of crystalline Ga(2)O(3) membrane. Beyond that, benefiting from the weak vdW bond between Ga(2)O(3) and mica substrate, in this work, the Ga(2)O(3) membrane is exfoliated and transferred to arbitrary flexible and adhesive tape, allowing for the vertical and flexible electronic configuration. This straightforward exfoliation method is verified to be consistent and reproducible by the transfer and characterization of thick (∼380 nm)/thin (∼95 nm) κ-phase Ga(2)O(3) and conductive n-type β-Ga(2)O(3). Vertical photodetectors are fabricated based on the exfoliated Ga(2)O(3) membrane, denoting the peak response at ∼250 nm. Through the integration of Ti/Au Ohmic contact and Ni/Ag Schottky contact electrode, the vertical photodetector exhibits self-powered photodetection behavior with a responsivity of 17 mA/W under zero bias. The vdW-bond-assisted exfoliation of the Ga(2)O(3) membrane demonstrated here could provide enormous opportunities in the pursuit of vertical and flexible Ga(2)O(3) electronics.