Pixel-level plasmonic microcavity infrared photodetector

像素级等离子体微腔红外光电探测器

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Abstract

Recently, plasmonics has been central to the manipulation of photons on the subwavelength scale, and superior infrared imagers have opened novel applications in many fields. Here, we demonstrate the first pixel-level plasmonic microcavity infrared photodetector with a single quantum well integrated between metal patches and a reflection layer. Greater than one order of magnitude enhancement of the peak responsivity has been observed. The significant improvement originates from the highly confined optical mode in the cavity, leading to a strong coupling between photons and the quantum well, resulting in the enhanced photo-electric conversion process. Such strong coupling from the localized surface plasmon mode inside the cavity is independent of incident angles, offering a unique solution to high-performance focal plane array devices. This demonstration paves the way for important infrared optoelectronic devices for sensing and imaging.

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