Abstract
An optically pumped ultrasensitive broadband terahertz (THz) wave modulator based on polyvinyl alcohol (PVA) film on Si wafer was demonstrated in this work. The THz time domain spectroscopy experiments confirm that the PVA/Si can drastically enhance the photo-induced THz wave modulation on the Si surface, especially when the PVA film is heated by a high-power laser. A modulation depth of 72% can be achieved only under 0.55 W/cm(2) modulated laser power, which is superior significantly to the bare Si. The numerical simulations indicate that the laser processed PVA (LP-PVA) film increases the photo-generated carrier concentration on the Si surface in two orders of magnitude higher than that of bare Si. Moreover, the modulation mechanism and the dynamic process of laser heating on the PVA/Si have been discussed. This highly efficient THz modulation mechanism and its simple fabrication method have great application potentials in THz modulators.