Abstract
One of the outstanding optoelectronic devices is perovskite-based light emitting diodes (PeLEDs) that have diverse applications according to the wavelength of produced light. However, these devices have shown more than 20% External Quantum Efficiency (EQE), in comparison with their counterparts (OLEDs), light extraction is limited in these devices. In this paper, by optimizing the thickness of layers and manipulating absorption in the active layer (AL), the light extraction efficiency (LEE) increased by nearly 20%. It reached 42.89% in the near-infrared (NIR) region of the wavelength, by considering the CH(NH(2))(2)PbI(3) perovskite, in the emissive layer (EML).