Abstract
Although Vanadium dioxide (VO(2)) has a potential application value for smart energy efficient windows because of its unique phase transition characteristic, there are still many obstacles that need to be overcome. One challenge is to reduce its high transition temperature (ζ(c) = 68 °C) to near room temperature without causing its phase transition performance degradation. In this paper, a novel method was employed that covered a 3 nm ultra-thin heavy Cr-doped VO(2) layer on the pure VO(2) films. Compared with the as-grown pure VO(2), obviously, phase transition temperature decreasing from 59.5 °C to 48.0 °C was observed. Different from previous doping techniques, almost no phase transition performance weakening occurred. Based on the microstructure and electrical parameters measurement results, the mechanism of ζ(c) reducing was discussed. The upper ultra-thin heavy Cr-doped layer may act as the induced role of phase transition. With temperature increasing, carrier concentration increased from the upper heavy Cr-doped layer to the bottom pure VO(2) layer by diffusion, and induced the carrier concentration reach to phase transition critical value from top to bottom gradually. The present method is not only a simpler technique, but also avoids expensive alloy targets.