Abstract
Silicon single-photon avalanche detectors are becoming increasingly significant in research and in practical applications due to their high signal-to-noise ratio, complementary metal oxide semiconductor compatibility, room temperature operation, and cost-effectiveness. However, there is a trade-off in current silicon single-photon avalanche detectors, especially in the near infrared regime. Thick-junction devices have decent photon detection efficiency but poor timing jitter, while thin-junction devices have good timing jitter but poor efficiency. Here, we demonstrate a light-trapping, thin-junction Si single-photon avalanche diode that breaks this trade-off, by diffracting the incident photons into the horizontal waveguide mode, thus significantly increasing the absorption length. The photon detection efficiency has a 2.5-fold improvement in the near infrared regime, while the timing jitter remains 25 ps. The result provides a practical and complementary metal oxide semiconductor compatible method to improve the performance of single-photon avalanche detectors, image sensor arrays, and silicon photomultipliers over a broad spectral range.The performance of silicon single-photon avalanche detectors is currently limited by the trade-off between photon detection efficiency and timing jitter. Here, the authors demonstrate how a CMOS-compatible, nanostructured, thin junction structure can make use of tailored light trapping to break this trade-off.