Abstract
Hybrid metal/semiconductor nano-heterostructures with strong exciton-plasmon coupling have been proposed for applications in hot carrier optoelectronic devices. However, the performance of devices based on this concept has been limited by the poor efficiency of plasmon-hot electron conversion at the metal/semiconductor interface. Here, we report that the efficiency of interfacial hot excitation transfer can be substantially improved in hybrid metal semiconductor nano-heterostructures consisting of perovskite semiconductors. In Ag-CsPbBr(3) nanocrystals, both the plasmon-induced hot electron and the resonant energy transfer processes can occur on a time scale of less than 100 fs with quantum efficiencies of 50 ± 18% and 15 ± 5%, respectively. The markedly high efficiency of hot electron transfer observed here can be ascribed to the increased metal/semiconductor coupling compared with those in conventional systems. These findings suggest that hybrid architectures of metal and perovskite semiconductors may be excellent candidates to achieve highly efficient plasmon-induced hot carrier devices.