Abstract
Dielectric/metal/dielectric plasmonic transparent structures play an important role in tailoring the high-optical performance of various optoelectronic devices. Though these structures are in significant demand in applications, including modification of the optical properties, average visible transmittance (AVT) and colour render index (CRI) and correlated colour temperature (CCT), obtaining optimal ones require precise thickness optimization. The overall objective of this study is the estimation of the optimal design concept of MoO(3)/Ag/WO(3) (10/d(Ag)/d(WO3) nm) plasmonic structure. To explore the proper use in optoelectronic devices, we are motivated to conduct a rigorous optical evaluation on the thickness of layers. Having calculated optical characteristics and achieved the highest AVT of 97.3% for d(Ag) = 4 nm and d(WO3) = 6 nm by the transfer matrix method, it is quite possible to offer the potential of the structure acting as a transparent contact. Notably, the colour coordinates of the structure are x = 0.3110 and y = 0.3271, namely, it attributes very close to the Planckian locus. This superior colour performance displays that MoO(3)/Ag/WO(3) shall undergo rapid development in neutral-colour windows and LED technologies. Structure with d(Ag) = 6 nm and d(WO3) = 16 nm exhibits the highest CRI of 98.58, thus identifying an optimal structure that can be integrated into LED lighting applications and imaging technologies. Besides the colour of structure with d(Ag) = 4 nm and d(WO3) = 8 nm is equal for D65 Standard Illuminant, the study reports that the range of CCTs are between 5000 and 6500 K. This optimization makes the structure employable as a near-daylight broadband illuminant. The study emphasizes that optimal MoO(3)/Ag/WO(3) plasmonic structures can be used effectively to boost optoelectronic devices' performance.