Gate-tunable flexible photodetector with wavelength-selective response based on asymmetric 2D heterostructures

基于非对称二维异质结构的具有波长选择性响应的栅极可调谐柔性光电探测器

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Abstract

Flexible photodetectors with wavelength-selective response are essential for next-generation wearable and bio-integrated optoelectronics. However, conventional devices typically rely on external filters or complex structures, limiting the flexibility, integration, and broadband applications. Here, we present a gate-tunable flexible photodetector based on asymmetric van der Waals heterostructures composed of graphene, Molybdenum disulfide and single-walled carbon nanotubes. The asymmetric design induces a built-in electric field, effectively suppressing dark current and enabling dynamic modulation of spectral responsivity via gate voltage. As a result, the device achieves switchable photoresponse peaks at 450 nm and 635 nm, demonstrating a high responsivity of up to 40.3 A/W and a specific detectivity of 1.3 × 10(11) Jones. Furthermore, the device maintains robust performance under mechanical deformation and gate voltages. This work offers a scalable approach to realize intrinsically wavelength-selective, high-performance photodetectors on flexible substrates, providing new opportunities for integrated, broadband, and flexible optoelectronic applications.

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