Chemiresistive Properties of Imprinted Fluorinated Graphene Films

印迹氟化石墨烯薄膜的化学电阻特性

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Abstract

The electrical conductivity of graphene materials is strongly sensitive to the surface adsorbates, which makes them an excellent platform for the development of gas sensor devices. Functionalization of the surface of graphene opens up the possibility of adjusting the sensor to a target molecule. Here, we investigated the sensor properties of fluorinated graphene films towards exposure to low concentrations of nitrogen dioxide NO(2). The films were produced by liquid-phase exfoliation of fluorinated graphite samples with a composition of CF(0.08), CF(0.23), and CF(0.33.) Fluorination of graphite using a BrF(3)/Br(2) mixture at room temperature resulted in the covalent attachment of fluorine to basal carbon atoms, which was confirmed by X-ray photoelectron and Raman spectroscopies. Depending on the fluorination degree, the graphite powders had a different dispersion ability in toluene, which affected an average lateral size and thickness of the flakes. The films obtained from fluorinated graphite CF(0.33) showed the highest relative response ca. 43% towards 100 ppm NO(2) and the best recovery ca. 37% at room temperature.

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