Abstract
The overloaded energy cost has become the main concern of the now fast developing society, which make novel energy devices with high power density of critical importance to the sustainable development of human society. Herein, a dynamic Schottky diode based generator with ultrahigh power density of 1262.0 W m(-2) for sliding Fe tip on rough p-type silicon is reported. Intriguingly, the increased surface states after rough treatment lead to an extremely enhanced current density up to 2.7 × 10(5) A m(-2), as the charged surface states can effectively accelerate the carriers through large atomic electric field, while the reflecting directions are regulated by the built-in electric field of the Schottky barrier. This research provides an open avenue for utilizing the surface states in semiconductors in a subversive way, which can co-utilize the atomic electric field and built-in electric field to harvest energy from the mechanical movements, especially for achieving an ultrahigh current density power source.