Abstract
In this work, we present a method for direct, site-selective growth of tellurium nanowires by electrochemical deposition. The Te nanowires were grown laterally between two specially designed nanoband electrodes across a gap, and over a dielectric material, forming a lateral device structure directly. The resulting wires are crystalline and phase pure, as evidenced by Raman spectroscopy, EDS (energy dispersive X-ray spectroscopy), and ADF-STEM (annular dark field scanning transmission electron microscopy). The precise conditions for lateral growth of the nanowires were investigated and the fabrication of an electronic device from the as-deposited material, without the need for any transfer process or further contact fabrication, is demonstrated.