Abstract
A novel strategy was employed to create supramolecular metallogels incorporating Tb(iii) and Eu(iii) ions using benzene-1,3,5-tricarboxylic acid (TA) as a gelator in N,N-dimethylformamide (DMF). Rheological analysis demonstrated their mechanical robustness under varying stress levels and angular frequencies. FESEM imaging revealed a flake-like hierarchical network for Tb-TA and a rod-shaped architecture for Eu-TA. EDX analysis confirmed essential chemical constituents within the metallogels. FT-IR, PXRD, Raman spectroscopy, and thermogravimetric analysis assessed their gelation process and material properties, showing semiconducting characteristics, validated by optical band-gap measurements. Metal-semiconductor junction-based devices integrating Al metal with Tb(iii)- and Eu(iii)-metallogels exhibited non-linear charge transport akin to a Schottky diode, indicating potential for advanced electronic device development. Direct utilization of benzene-1,3,5-tricarboxylic acid and Tb(iii)/Eu(iii) sources underscores their suitability as semiconducting materials for device fabrication. This study explores the versatile applications of Tb-TA and Eu-TA metallogels, offering insights for material science researchers.