Abstract
This study, for the first time, investigates and simulates ballistic-transport-induced avalanche behavior in two-dimensional materials. Using a technology computer-aided design simulation platform, a device model for ballistic avalanche transport is systematically established. By accurately calibrating the material parameters of two-dimensional materials and selecting appropriate physical models, the key features of the ballistic avalanche effect are successfully reproduced, including low threshold voltage and high gain. The simulation results show good agreement with experimental data. Furthermore, mechanism-based analysis is performed to clarify the influence of critical design parameters on the avalanche threshold and multiplication gain. Finally, based on the same physical models and mechanistic understanding, the operational paradigm and performance of ballistic-transport avalanche photodetectors based on two-dimensional materials are predicted. This work provides a reliable theoretical foundation and a robust simulation framework for the optimized design of high-performance and low-power avalanche photon devices.