Abstract
Indium Tin Oxide (ITO) is one of the most widely used ohmic materials for fabricating ohmic layers in thin-film solar cells. ITO thin layers have reached almost the maximum theoretical conductivity and the lowest practical resistivity. Along with indium's toxic environmental impact and the high cost of materials, these are the reasons why new materials for efficient, cheaper thin-film transparent ohmic layers are being examined. One of those materials is copper-doped zinc oxide (ZnO:Cu). In this paper, we present a new approach to copper-doped zinc oxide fabrication methods, based on the modern authorial Physical Vapor Co-Deposition technique, which involves optimizing Cu concentration to fine-tune crystal structure, optical band gap, and electrical properties, creating n-type TCOs essential for efficient charge transport in next-generation thin films perovskite solar cells.