Silicon Oxycarbide and Silicon Oxycarbonitride Materials under Concentrated Solar Radiation

聚光太阳辐射下的碳氧硅和碳氧氮化硅材料

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Abstract

The potential application of silicon oxycarbonitride (SiOCN), silicon oxycarbide (SiOC) and silicon oxycarbide-SiC (SiOC-SiC) for photothermal devices such as volumetric solar absorbers has been studied evaluating the response to thermal shock from a Fresnel lens. The accelerated ageing test comprises fast heating (32 °C min(-1)) and cooling rates (27 °C min(-1)) from 100 to 1000 °C and dwelling times of 10 min. Porous materials (SiOCN(p) and SiOC(p)) failed the thermal shock tests; they were massively degraded by the formation of a large depression in the focus of solar radiation. Dense materials (SiOC(d) and SiOC-SiC(d)) withstood 100 cycles of thermal shock ageing tests due to the formation of a protective silica layer. The absorptance values for dense materials remained fairly constant before and after thermal shock tests: from 94.5 to 94.3% for SiOC(d) and from 93.3 to 93.3% for SiOC-SiC(d). These preliminary studies indicate their potential for high-temperature solar receiver applications.

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