Abstract
Owing to their chemical and mechanical stability, metal-oxides have emerged as potential alternatives for conventional pure-metal and organic molecule-based solid-state electronic devices. Traditionally, band engineering of these metal-oxides has been performed to improve the efficiency of solar cells and transistors. However, recent advancements in the field of oxide-based electronic devices demand reversible band structure engineering for applications in next-generation adaptive electronics and memory devices. Therefore, this work aims to reversibly engineer the surface band structure of doped metal-oxides using stable organic ligands with weak dipoles. Para-substituted benzoic acid (BZA) ligands with positive and negative dipole moments were adsorbed in situ on the surface of TiO(2):Ni(2+) thin film to modify the interfacial dipole moment, and the valence band structure was probed using surface-sensitive ultraviolet photoelectron spectroscopy (UPS). UPS, paired with density functional theory (DFT) simulations, demonstrate the ability to selectively tune interfacial electronic/chemical landscapes with ligand-dependent dipole moment. The unique ability to reversibly tune the band bending at the organic-inorganic interface of doped metal-oxide semiconductors using molecular dipoles is expected to play a key role in the development of metal-oxide-based adaptive electronics that outperform the conventional polymer-based and Si-based devices.